Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer
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چکیده
Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic Mixer By Seung-Chan Han School of Electrical and Electronic Engineering College of Engineering Yonsei University Wireless communication is becoming an crucial area of today’s life. With chasing this trend, there are continuously growing demands for ultra-wideband transmission due to insufficiency of available frequency band and increase of information. To satisfy this, millimeter wave has drawn lots of technical attentions. In spite of its ability to transmit ultra wide bandwidth signals, available propagation range is restricted by its own nature. To overcome this limitation, Radio-on-Fiber technology is treated as one of effective ways.
منابع مشابه
Characteristics of InP/InGaAs HPT-based Optically Injection-Locked Self-oscillating Optoelectronic Mixers and Their Influence on RoF System Performance
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